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| SI3585DV Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 rDS(on) (W) 0.125 @ VGS = 4.5 V 0.200 @ VGS = 2.5 V 0.200 @ VGS = -4.5 V ID (A) 2.4 1.8 -1.8 -1.2 P-Channel -20 0.340 @ VGS = -2.5 V D1 S2 TSOP-6 Top View G1 1 6 D1 G2 3 mm S2 2 5 S1 G1 G2 3 4 D2 2.85 mm S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID IDM IS 1.05 1.15 0.59 P-Channel 10 secs Steady State -20 "12 V -1.5 -1.2 -7 A -0.75 0.83 0.53 W _C Symbol VDS VGS 10 secs Steady State 20 "12 Unit 2.4 1.7 8 2.0 1.4 -1.8 -1.3 0.75 0.83 0.53 -55 to 150 -1.05 1.15 0.59 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS N-Channel Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71184 S-03512--Rev. B, 04-Apr-01 www.vishay.com Steady State Steady State RthJA RthJF P-Channel Typ 93 130 75 Symbol Typ 93 130 75 Max 110 150 90 Max 110 150 90 Unit _C/W C/W 1 SI3585DV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "12 V " VDS = 16 V, VGS = 0 V VDS = -16 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 16 V, VGS = 0 V, TJ = 55_C VDS = -16 V, VGS = 0 V, TJ = 55_C On-State Drain Currenta VDS w 5 V, VGS = 4.5 V ID(on) VDS p -5 V, VGS = -4.5 V VGS = 4.5 V, ID = 2.4 A Drain-Source On-State Resistancea VGS = -4.5 V, ID = -1.8 A rDS(on) VGS = 2.5 V, ID = 1.8 A VGS = -2.5 V, ID = -1.2 A Forward Transconductancea VDS = 5 V, ID = 2.4 A gfs VDS = -5 V, ID = -1.8 A IS = 1.05 A, VGS = 0 V VSD IS = -1.05 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 5 -5 0.100 0.160 0.160 0.280 5 3.6 0.80 -0.83 1.10 -1.10 V S 0.125 0.200 0.200 0.340 W A 0.6 V -0.5 "100 "100 1 -1 5 -5 mA m nA Symbol Test Condition Min Typ Max Unit Gate-Body Leakage IGSS Diode Forward Voltagea Dynamicb N-Ch Total Gate Charge Qg N-Channel VDS = 10 V, VGS = 4.5 V, ID = 2.4 A Gate-Source Charge Qgs P-Channel VDS = -10 V, VGS = -4.5 V, ID = -1.8 A P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Turn-On Delay Time td(on) N-Channel VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W P-Channel VDD = -10 V, RL = 10 W ID ^ -1 A, VGEN = -4.5 V, RG = 6 W P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Fall Time Source-Drain Reverse Recovery Time tf IF = 1.05 A, di/dt = 100 A/ms trr IF = -1.05 A, di/dt = 100 A/ms P-Ch N-Ch P-Ch 2.1 2.7 0.3 nC 0.4 0.4 0.6 10 11 30 34 14 19 6 24 30 20 17 17 50 50 25 30 12 36 50 40 ns 3.2 4.0 Gate-Drain Charge Qgd Rise Time tr Turn-Off Delay Time td(off) Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 71184 S-03512--Rev. B, 04-Apr-01 SI3585DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 10 VGS = 4.5 thru 3.5 V 8 I D - Drain Current (A) 3V I D - Drain Current (A) 8 25_C 6 125_C 10 TC = -55_C N-CHANNEL Transfer Characteristics 6 2.5 V 4 4 2 2V 2 1.5 V 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.5 300 Capacitance r DS(on) - On-Resistance ( W ) 0.4 C - Capacitance (pF) 250 Ciss 200 0.3 VGS = 2.5 V 0.2 VGS = 4.5 V 0.1 150 100 Coss 50 Crss 0.0 0 1 2 3 4 5 6 7 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 4.5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 2.4 A 1.8 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 2.4 A r DS(on) - On-Resistance (W) (Normalized) 1.0 1.5 2.0 2.5 3.6 1.6 1.4 2.7 1.2 1.8 1.0 0.9 0.8 0.0 0.0 0.5 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 71184 S-03512--Rev. B, 04-Apr-01 www.vishay.com 3 SI3585DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 10 0.40 ID = 2.4 A r DS(on)- On-Resistance ( W ) 0.32 ID = 1 A 0.24 N-CHANNEL On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) TJ = 150_C 1 0.16 TJ = 25_C 0.08 0.1 0.00 0.3 0.6 0.9 1.2 1.5 0.00 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 ID = 250 mA 0.2 V GS(th) Variance (V) 6 8 Single Pulse Power, Junction-to-Ambient -0.0 Power (W) 4 -0.2 2 -0.4 -0.6 -50 0 -25 0 25 50 75 100 125 150 0.01 0.1 Time (sec) 1 10 30 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 87_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 71184 S-03512--Rev. B, 04-Apr-01 SI3585DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 N-CHANNEL Normalized Thermal Transient Impedance, Junction-to-Foot 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 10 VGS = 4.5 thru 4 V 8 6 I D - Drain Current (A) 3V 6 I D - Drain Current (A) 25_C 3.5 V 8 P-CHANNEL Transfer Characteristics TC = -55_C 125_C 4 4 2.5 V 2 2V 1.5 V 2 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.6 450 Capacitance r DS(on) - On-Resistance ( W ) 0.5 C - Capacitance (pF) VGS = 2.5 V 0.4 360 Ciss 270 0.3 VGS = 3.6 V 180 Coss 90 Crss 0 4 8 12 16 20 0.2 VGS = 4.5 V 0.1 0.0 0 1 2 3 4 5 6 7 ID - Drain Current (A) Document Number: 71184 S-03512--Rev. B, 04-Apr-01 0 VDS - Drain-to-Source Voltage (V) www.vishay.com 5 SI3585DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate Charge 4.5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 2.4 A 1.8 1.6 r DS(on) - On-Resistance (W) (Normalized) 1.4 1.2 1.0 0.8 0.6 0.0 0.0 0.4 -50 VGS = 10 V ID = 2.4 A P-CHANNEL On-Resistance vs. Junction Temperature 3.6 2.7 1.8 0.9 0.6 1.2 1.8 2.4 3.0 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 10 0.6 On-Resistance vs. Gate-to-Source Voltage ID = 1.8 A 0.5 r DS(on)- On-Resistance ( W ) ID = 1.2 A 0.4 I S - Source Current (A) TJ = 150_C 1 0.3 TJ = 25_C 0.2 0.1 0.1 0.00 0.3 0.6 0.9 1.2 1.5 0.0 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.6 ID = 250 mA 0.4 V GS(th) Variance (V) 6 8 Single Pulse Power, Junction-to-Ambient 0.2 Power (W) 4 0.0 2 -0.2 -0.4 -50 0 -25 0 25 50 75 100 125 150 0.01 0.1 Time (sec) 1 10 30 TJ - Temperature (_C) www.vishay.com 6 Document Number: 71184 S-03512--Rev. B, 04-Apr-01 SI3585DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance P-CHANNEL 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 87_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (sec) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Foot 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71184 S-03512--Rev. B, 04-Apr-01 www.vishay.com 7 |
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